Probing charge transport in hydrogenated micro-crystalline cilicon thin films with nanometer resolution

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00338215" target="_blank" >RIV/68378271:_____/09:00338215 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Probing charge transport in hydrogenated micro-crystalline cilicon thin films with nanometer resolution

Popis výsledku v původním jazyce

We present long-term effort to characterize both the structure and local electronic properties of ?c-Si:H thin films by the nanometer resolved measurements of local conductivity using a tip of atomic force microscope (AFM). Conductive AFM can measure simultaneously and independently topography and local conductivity of the sample with resolution down to few nanometers and so it can be used to address the existing controversy about what is the dominant route of electronic transport in these films. However, the C-AFM technique itself is influenced by surface oxide, either native or created in the process of measurement by local anodic oxidation (LAO). Our experiments allowed us to understand the effect of oxide on the observed maps of conductivity. We describe the origin of the oxide-related artifacts and also a procedure how to avoid them. Based on these experiments we offer the model of charge transport, which is also supported by results from many other experimental techniques.

Název v anglickém jazyce

Probing charge transport in hydrogenated micro-crystalline cilicon thin films with nanometer resolution

Popis výsledku anglicky

We present long-term effort to characterize both the structure and local electronic properties of ?c-Si:H thin films by the nanometer resolved measurements of local conductivity using a tip of atomic force microscope (AFM). Conductive AFM can measure simultaneously and independently topography and local conductivity of the sample with resolution down to few nanometers and so it can be used to address the existing controversy about what is the dominant route of electronic transport in these films. However, the C-AFM technique itself is influenced by surface oxide, either native or created in the process of measurement by local anodic oxidation (LAO). Our experiments allowed us to understand the effect of oxide on the observed maps of conductivity. We describe the origin of the oxide-related artifacts and also a procedure how to avoid them. Based on these experiments we offer the model of charge transport, which is also supported by results from many other experimental techniques.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů