Raman mapping of microcrystalline silicon thin films with high spatial resolution

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00347763" target="_blank" >RIV/68378271:_____/10:00347763 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Raman mapping of microcrystalline silicon thin films with high spatial resolution

Popis výsledku v původním jazyce

Raman maps, i.e., grids of individual spectra of Raman scattering from excitation laser beam focused by optical microscope, were used to characterize mixed phase silicon thin films. Raman maps measured with 442 nm and 785 nm lasers were compared with topography or local current maps recorded by conductive atomic force microscope (C-AFM) in the same field of view. The Raman measurement may irreversibly influence the thin film surface by thermal oxidation, as proved by the change of local conductivity observed in C-AFM. Resolution limit of individual grains in Raman mapping with 442 nm excitation was 350 nm, however, we were able to detect much smaller individual grains (down to 160 nm diameter measured by AFM) if they were isolated in amorphous matrix.Polarized Raman spectroscopy is able to detect the crystallographic orientation of the single microcrystalline grain. Resolution of the Raman mapping may be significantly improved by tip enhanced Raman measurement.

Název v anglickém jazyce

Raman mapping of microcrystalline silicon thin films with high spatial resolution

Popis výsledku anglicky

Raman maps, i.e., grids of individual spectra of Raman scattering from excitation laser beam focused by optical microscope, were used to characterize mixed phase silicon thin films. Raman maps measured with 442 nm and 785 nm lasers were compared with topography or local current maps recorded by conductive atomic force microscope (C-AFM) in the same field of view. The Raman measurement may irreversibly influence the thin film surface by thermal oxidation, as proved by the change of local conductivity observed in C-AFM. Resolution limit of individual grains in Raman mapping with 442 nm excitation was 350 nm, however, we were able to detect much smaller individual grains (down to 160 nm diameter measured by AFM) if they were isolated in amorphous matrix.Polarized Raman spectroscopy is able to detect the crystallographic orientation of the single microcrystalline grain. Resolution of the Raman mapping may be significantly improved by tip enhanced Raman measurement.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi C: Current Topics in Solid State Physics

ISSN

1862-6351

e-ISSN

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Svazek periodika

7

Číslo periodika v rámci svazku

3-4

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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