Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 ?m bands

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00367915" target="_blank" >RIV/68378271:_____/11:00367915 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1166/jnn.2011.4223" target="_blank" >http://dx.doi.org/10.1166/jnn.2011.4223</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1166/jnn.2011.4223" target="_blank" >10.1166/jnn.2011.4223</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 ?m bands

Popis výsledku v původním jazyce

The effect of different InGaAs and GaAsSb strain reducing layers on PL and EL from self-assembled InAs/GaAs quantum dots grown by metal-organic vapour phase epitaxy was investigated. The aim was to shift their luminescence maximum towards optical communication wavelengths at 1.3 or 1.55 ?m. Results show that covering by InGaAs strain reducing layer provides stronger shift of photoluminescence maximum (up to 1.55 ?m) as compared to GaAsSb one with similar strain in the structure. This is caused by the increase of quantum dot size during InGaAs capping and reduction of quantum confinement of the electron wave function which spreads into the cap. Although strong electroluminescence at 1300 nm was achieved from quantum dots covered by both types of strainreducing layers, the aAsSb strain reducing layer is more suitable for long wavelength lectroluminescence due to higher electron confinement potential allowing suppression of thermal carrier escape from quantum dots.

Název v anglickém jazyce

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 ?m bands

Popis výsledku anglicky

The effect of different InGaAs and GaAsSb strain reducing layers on PL and EL from self-assembled InAs/GaAs quantum dots grown by metal-organic vapour phase epitaxy was investigated. The aim was to shift their luminescence maximum towards optical communication wavelengths at 1.3 or 1.55 ?m. Results show that covering by InGaAs strain reducing layer provides stronger shift of photoluminescence maximum (up to 1.55 ?m) as compared to GaAsSb one with similar strain in the structure. This is caused by the increase of quantum dot size during InGaAs capping and reduction of quantum confinement of the electron wave function which spreads into the cap. Although strong electroluminescence at 1300 nm was achieved from quantum dots covered by both types of strainreducing layers, the aAsSb strain reducing layer is more suitable for long wavelength lectroluminescence due to higher electron confinement potential allowing suppression of thermal carrier escape from quantum dots.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Nanoscience and Nanotechnology

ISSN

1533-4880

e-ISSN

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Svazek periodika

11

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

6804-6809

Kód UT WoS článku

000295296400021

EID výsledku v databázi Scopus

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