Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00383762" target="_blank" >RIV/68378271:_____/12:00383762 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4739279" target="_blank" >http://dx.doi.org/10.1063/1.4739279</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4739279" target="_blank" >10.1063/1.4739279</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Popis výsledku v původním jazyce

We report superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at 77and 300 K. Such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2?3 times in the current range 50?200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ?EC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Calculation of the size quantization energy levels is presented, and possible cases of impact ionization, depending on the band offset ?EC at theinterface and on the quantum well width, are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices as well as for photovoltaic elements.

Název v anglickém jazyce

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Popis výsledku anglicky

We report superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at 77and 300 K. Such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2?3 times in the current range 50?200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ?EC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Calculation of the size quantization energy levels is presented, and possible cases of impact ionization, depending on the band offset ?EC at theinterface and on the quantum well width, are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices as well as for photovoltaic elements.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F1201" target="_blank" >GAP102/10/1201: Kvantové tečky pro detektory a jiné součástky</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Svazek periodika

112

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

"023108-1"-"023108-10"

Kód UT WoS článku

000308424500008

EID výsledku v databázi Scopus

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