Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00421578" target="_blank" >RIV/68378271:_____/13:00421578 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2017124" target="_blank" >http://dx.doi.org/10.1117/12.2017124</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2017124" target="_blank" >10.1117/12.2017124</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

Popis výsledku v původním jazyce

We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb QW in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ?EC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-IR spectral range, as well as for photovoltaic elements.

Název v anglickém jazyce

Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

Popis výsledku anglicky

We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb QW in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ?EC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-IR spectral range, as well as for photovoltaic elements.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA13-15286S" target="_blank" >GA13-15286S: Nano-heterostruktury s hlubokou kvantovou jámou na bázi GaSb</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

INTEGRATED OPTICS: PHYSICS AND SIMULATIONS ( Proceedings of SPIE 8781)

ISBN

978-0-8194-9583-9

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

9

Strana od-do

1-9

Název nakladatele

SPIE

Místo vydání

BELLINGHAM

Místo konání akce

Prague

Datum konání akce

17. 4. 2013

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000323312700014