Quantitative low-energy electron diffraction analysis of the GaN(000-1) (11) reconstruction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00385078" target="_blank" >RIV/68378271:_____/12:00385078 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.susc.2012.01.002" target="_blank" >http://dx.doi.org/10.1016/j.susc.2012.01.002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.susc.2012.01.002" target="_blank" >10.1016/j.susc.2012.01.002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Quantitative low-energy electron diffraction analysis of the GaN(000-1) (11) reconstruction

Popis výsledku v původním jazyce

The atomic structure of the GaN(000-1) (11) reconstruction was investigated by quantitative low-energy electron diffraction (LEED). The GaN surface was annealed in an NH3 atmosphere and cooled down without any NH3 flux. LEED patterns with 6-fold symmetrywere measured after annealing. LEED intensity?voltage (I?V) curves were acquired and calculated in the framework of the dynamical theory of electron scattering. Good agreement between the experimental and theoretical curves was achieved for the bare GaN(000-1) (11) surface. Relaxation of the surface atomic layers decreased Pendry's R-factor to 0.21 0.03. The plane relaxations derived from the LEED analysis were found to be in qualitative agreement with ab initio calculations. It was concluded that themeasured LEED I?V curves could be used to determine the bare GaN polarity.

Název v anglickém jazyce

Quantitative low-energy electron diffraction analysis of the GaN(000-1) (11) reconstruction

Popis výsledku anglicky

The atomic structure of the GaN(000-1) (11) reconstruction was investigated by quantitative low-energy electron diffraction (LEED). The GaN surface was annealed in an NH3 atmosphere and cooled down without any NH3 flux. LEED patterns with 6-fold symmetrywere measured after annealing. LEED intensity?voltage (I?V) curves were acquired and calculated in the framework of the dynamical theory of electron scattering. Good agreement between the experimental and theoretical curves was achieved for the bare GaN(000-1) (11) surface. Relaxation of the surface atomic layers decreased Pendry's R-factor to 0.21 0.03. The plane relaxations derived from the LEED analysis were found to be in qualitative agreement with ab initio calculations. It was concluded that themeasured LEED I?V curves could be used to determine the bare GaN polarity.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GPP204%2F10%2FP028" target="_blank" >GPP204/10/P028: Ztráty energie elektronů u povrchů pevných látek</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface Science

ISSN

0039-6028

e-ISSN

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Svazek periodika

606

Číslo periodika v rámci svazku

7-8

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

740-743

Kód UT WoS článku

000301471200011

EID výsledku v databázi Scopus

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