Superlinear luminescence and enhancement of optical power in GaSb-based heterostructures with high conduction-band offsets and nanostructures with deep quantum wells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00396176" target="_blank" >RIV/68378271:_____/13:00396176 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Superlinear luminescence and enhancement of optical power in GaSb-based heterostructures with high conduction-band offsets and nanostructures with deep quantum wells

Popis výsledku v původním jazyce

Superlinear luminescence in the spectral range of 0.2?0.8 eV was observed. InAsSb narrow-gap active layer in quantum-sized heterostructures with deep Al(As)Sb/InAs0.84Sb0.16/Al(As)Sb QW was grown by MOVPE on a n-GaSb substrate. In both types of structures under study the obtained effects of superlinear luminescence can be explained by a similar mechanism: the contribution to radiative recombination of extra electron?hole pairs due to impact ionization by hot electrons that were heated via high conduction-band offset at the interface of narrow-gap heterostructures or in a deep QW (inverse Auger process). Optical power increase in both types of structures is described by the same power law P = AIB. B reaches 1.5?2.2 in bulk heterostructures and 2?3 in nanostructures at 77 and 300 K due to the stronger localization of carriers in a deep QW. Theoretical estimations are in good agreement with the experimental data.

Název v anglickém jazyce

Superlinear luminescence and enhancement of optical power in GaSb-based heterostructures with high conduction-band offsets and nanostructures with deep quantum wells

Popis výsledku anglicky

Superlinear luminescence in the spectral range of 0.2?0.8 eV was observed. InAsSb narrow-gap active layer in quantum-sized heterostructures with deep Al(As)Sb/InAs0.84Sb0.16/Al(As)Sb QW was grown by MOVPE on a n-GaSb substrate. In both types of structures under study the obtained effects of superlinear luminescence can be explained by a similar mechanism: the contribution to radiative recombination of extra electron?hole pairs due to impact ionization by hot electrons that were heated via high conduction-band offset at the interface of narrow-gap heterostructures or in a deep QW (inverse Auger process). Optical power increase in both types of structures is described by the same power law P = AIB. B reaches 1.5?2.2 in bulk heterostructures and 2?3 in nanostructures at 77 and 300 K due to the stronger localization of carriers in a deep QW. Theoretical estimations are in good agreement with the experimental data.

Druh

C - Kapitola v odborné knize

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA13-15286S" target="_blank" >GA13-15286S: Nano-heterostruktury s hlubokou kvantovou jámou na bázi GaSb</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název knihy nebo sborníku

The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications

ISBN

9780819495969

Počet stran výsledku

27

Strana od-do

105-131

Počet stran knihy

892

Název nakladatele

SPIE Press

Místo vydání

Bellingham

Kód UT WoS kapitoly

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