Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00397887" target="_blank" >RIV/68378271:_____/13:00397887 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

Popis výsledku v původním jazyce

CuIn1-xGaxSe2 (CIGS) thin films were prepared by the sputtering of metallic precursors Cu, In, Ga in HiPIMS or DC magnetron and subsequently selenized in an atmosphere of pure Se or Ar+Se. The average absorbed power and discharge current were the same inthe HiPIMS and DC plasma. The basic aim of this work was to compare the structural properties of the CIGS films as a function of magnetron excitation mode and selenization thermal treatment conditions. Film characteristics were measured using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy and other techniques. All the CIGS films revealed the chalcopyrite crystal structure with a preferential (112) orientation. Only a very small influence of magnetron excitation mode on thin film properties was observed. On the other hand, selenization in Ar+Se atmosphere led to bigger grain size, better crystallinity and a significantly higher level of Ga substitution.

Název v anglickém jazyce

Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

Popis výsledku anglicky

CuIn1-xGaxSe2 (CIGS) thin films were prepared by the sputtering of metallic precursors Cu, In, Ga in HiPIMS or DC magnetron and subsequently selenized in an atmosphere of pure Se or Ar+Se. The average absorbed power and discharge current were the same inthe HiPIMS and DC plasma. The basic aim of this work was to compare the structural properties of the CIGS films as a function of magnetron excitation mode and selenization thermal treatment conditions. Film characteristics were measured using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy and other techniques. All the CIGS films revealed the chalcopyrite crystal structure with a preferential (112) orientation. Only a very small influence of magnetron excitation mode on thin film properties was observed. On the other hand, selenization in Ar+Se atmosphere led to bigger grain size, better crystallinity and a significantly higher level of Ga substitution.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

<a href="/cs/project/LH12045" target="_blank" >LH12045: Příprava a analýza vlastností tenkovrstvých Cu(In,X)Se2 solárních článků připravovaných metodami plazmatické depozice a sprejového naprašování</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Advanced Oxidation Technologies

ISSN

1203-8407

e-ISSN

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Svazek periodika

16

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

CA - Kanada

Počet stran výsledku

6

Strana od-do

314-319

Kód UT WoS článku

000322719200014

EID výsledku v databázi Scopus

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