Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00428421" target="_blank" >RIV/68378271:_____/14:00428421 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/14:00428421

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.03.031" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2014.03.031</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.03.031" target="_blank" >10.1016/j.jcrysgro.2014.03.031</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Popis výsledku v původním jazyce

Epitaxial growth of InAs on semi-insulating GaAs was a subject of various attempts to reduce the influence of the 7% lattice mismatch on the InAs layer properties. The most cost effective and promising method appears to be the growth of low temperature buffer (LTB) InAs layer at 400 °C followed by a thick InAs layer at 600 °C. There is a scarcity of available information about the structural properties of the LTB layers, their background conductivity type and level of doping. We have found that a predominant part of the threading dislocations generated at the interface annihilate within the first 400 nm. The average misfit dislocation spacing is 6.15 nm, proving that the LTB InAs/GaAs interface is nearly completely relaxed. XRD measurements have revealed a well pronounced deformation decrease in the LTB layers for thicknesses above 300 nm. The LTB InAs layer is n-type with carrier concentration of the order of 51016 cm-3 and can be additionally doped with Te and hence can serve as a bo

Název v anglickém jazyce

Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Popis výsledku anglicky

Epitaxial growth of InAs on semi-insulating GaAs was a subject of various attempts to reduce the influence of the 7% lattice mismatch on the InAs layer properties. The most cost effective and promising method appears to be the growth of low temperature buffer (LTB) InAs layer at 400 °C followed by a thick InAs layer at 600 °C. There is a scarcity of available information about the structural properties of the LTB layers, their background conductivity type and level of doping. We have found that a predominant part of the threading dislocations generated at the interface annihilate within the first 400 nm. The average misfit dislocation spacing is 6.15 nm, proving that the LTB InAs/GaAs interface is nearly completely relaxed. XRD measurements have revealed a well pronounced deformation decrease in the LTB layers for thicknesses above 300 nm. The LTB InAs layer is n-type with carrier concentration of the order of 51016 cm-3 and can be additionally doped with Te and hence can serve as a bo

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

—

Číslo periodika v rámci svazku

396

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

54-60

Kód UT WoS článku

000335905400009

EID výsledku v databázi Scopus

—