Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00431316" target="_blank" >RIV/68378271:_____/14:00431316 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.033" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.02.033</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.033" target="_blank" >10.1016/j.apsusc.2014.02.033</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Popis výsledku v původním jazyce

The aim of this work is to influence QD formation by improving the lower and upper InAs/GaAs QD interface quality. Lower interface: a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. Upper interface formed during the covering process: InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atomsin covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.

Název v anglickém jazyce

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Popis výsledku anglicky

The aim of this work is to influence QD formation by improving the lower and upper InAs/GaAs QD interface quality. Lower interface: a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. Upper interface formed during the covering process: InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atomsin covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Svazek periodika

301

Číslo periodika v rámci svazku

SI

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

173-177

Kód UT WoS článku

000335095600027

EID výsledku v databázi Scopus

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