Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00447828" target="_blank" >RIV/68378271:_____/15:00447828 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.10.026" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2014.10.026</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.10.026" target="_blank" >10.1016/j.jcrysgro.2014.10.026</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Popis výsledku v původním jazyce

Quantum dot (QD) and multiple QD structures with InAs/GaAs QDs covered by GaAsSb strain reducing layer (SRL) prepared by MOVPE are presented. The growth of structures was studied in situ by reflectance anisotropy spectroscopy (RAS), which offers direct observation of processes during the structure growth such as QD formation, and dissolution or surfacting of In and Sb atoms. Enhanced In surfacting was observed for structures with GaAsSb SRL. Possible ways, how to suppress surfacting of both types of atoms and how to prevent their transport on epitaxial surface to the subsequent QD layer in multiple QD layer structures, are suggested. Different interruptions, growth rates and temperatures of the separation layer growth are discussed with respect to thesuppression of undesired surfacting of In and Sb atoms. The conclusions derived from RAS measurements are supported by HRTEM, AFM or PL results.

Název v anglickém jazyce

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Popis výsledku anglicky

Quantum dot (QD) and multiple QD structures with InAs/GaAs QDs covered by GaAsSb strain reducing layer (SRL) prepared by MOVPE are presented. The growth of structures was studied in situ by reflectance anisotropy spectroscopy (RAS), which offers direct observation of processes during the structure growth such as QD formation, and dissolution or surfacting of In and Sb atoms. Enhanced In surfacting was observed for structures with GaAsSb SRL. Possible ways, how to suppress surfacting of both types of atoms and how to prevent their transport on epitaxial surface to the subsequent QD layer in multiple QD layer structures, are suggested. Different interruptions, growth rates and temperatures of the separation layer growth are discussed with respect to thesuppression of undesired surfacting of In and Sb atoms. The conclusions derived from RAS measurements are supported by HRTEM, AFM or PL results.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

414

Číslo periodika v rámci svazku

Mar

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

156-160

Kód UT WoS článku

000349602900028

EID výsledku v databázi Scopus

2-s2.0-84922580803