Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00435666" target="_blank" >RIV/68378271:_____/14:00435666 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1134/S1063782614110049" target="_blank" >http://dx.doi.org/10.1134/S1063782614110049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1063782614110049" target="_blank" >10.1134/S1063782614110049</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

Popis výsledku v původním jazyce

The results of investigation of electrically detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X band) for the identification of shallow and deep boron centers, NVSi defects, and isolated silicon vacancies (VSi), which are formed directly during the prep aration of planar nanostructures under conditions of silicon vacancy injection at the SiO2/n 6H SiC inter face without any subsequent irradiation, are presented. The prepared sandwich nanostructures are an ultra narrow p type quantum well, confined by ? barriers heavily doped with boron on an n 6H SiC surface, which are self ordered during pyrolytic oxide deposition and subsequent short time boron diffusion. The EDEPR data of point centers in sandwichnanostructures, prepared within the framework of Hall geometry, are recorded by measuring the field dependences of the magnetoresistance without an external cavity, microwave source and detector.

Název v anglickém jazyce

Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

Popis výsledku anglicky

The results of investigation of electrically detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X band) for the identification of shallow and deep boron centers, NVSi defects, and isolated silicon vacancies (VSi), which are formed directly during the prep aration of planar nanostructures under conditions of silicon vacancy injection at the SiO2/n 6H SiC inter face without any subsequent irradiation, are presented. The prepared sandwich nanostructures are an ultra narrow p type quantum well, confined by ? barriers heavily doped with boron on an n 6H SiC surface, which are self ordered during pyrolytic oxide deposition and subsequent short time boron diffusion. The EDEPR data of point centers in sandwichnanostructures, prepared within the framework of Hall geometry, are recorded by measuring the field dependences of the magnetoresistance without an external cavity, microwave source and detector.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/LM2011029" target="_blank" >LM2011029: SAFMAT - Středisko Analýzy Funkčních MATeriálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductors

ISSN

1063-7826

e-ISSN

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Svazek periodika

48

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

RU - Ruská federace

Počet stran výsledku

14

Strana od-do

1467-1480

Kód UT WoS článku

000344812300013

EID výsledku v databázi Scopus

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