Surface and ultrathin-layer absorptance spectroscopy for solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00439340" target="_blank" >RIV/68378271:_____/14:00439340 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.egypro.2014.12.342" target="_blank" >http://dx.doi.org/10.1016/j.egypro.2014.12.342</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.egypro.2014.12.342" target="_blank" >10.1016/j.egypro.2014.12.342</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface and ultrathin-layer absorptance spectroscopy for solar cells

Popis výsledku v původním jazyce

The methods Photothermal Deflection Spectroscopy and Fourier Transform Photocurrent Spectroscopy were modified to measure defect absorptance at the semiconductor surfaces and in ultra-thin layers. We present a method allowing us to routinely probe the hydrogen content and microstructure of ultrathin layers on top of crystalline wafer. We study the effects of sample storage, annealing and light soaking on defect density and the hydrogen content. Surface-defect layers, present on 350 nm thick hydrogenatedamorphous silicon, were studied and correlated to behavior of only 10 nm thick films of the same material. Interestingly, these distinct structures all exhibited similar behavior: loss of hydrogen due to <200°C annealing, practically no increase of defect density by light soaking, reduction of defect density just by storage in air. The observed behavior of the ultrathin layers is diametrically different from the usual behavior of bulk hydrogenated amorphous silicon.

Název v anglickém jazyce

Surface and ultrathin-layer absorptance spectroscopy for solar cells

Popis výsledku anglicky

The methods Photothermal Deflection Spectroscopy and Fourier Transform Photocurrent Spectroscopy were modified to measure defect absorptance at the semiconductor surfaces and in ultra-thin layers. We present a method allowing us to routinely probe the hydrogen content and microstructure of ultrathin layers on top of crystalline wafer. We study the effects of sample storage, annealing and light soaking on defect density and the hydrogen content. Surface-defect layers, present on 350 nm thick hydrogenatedamorphous silicon, were studied and correlated to behavior of only 10 nm thick films of the same material. Interestingly, these distinct structures all exhibited similar behavior: loss of hydrogen due to <200°C annealing, practically no increase of defect density by light soaking, reduction of defect density just by storage in air. The observed behavior of the ultrathin layers is diametrically different from the usual behavior of bulk hydrogenated amorphous silicon.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Energy Procedia

ISBN

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ISSN

1876-6102

e-ISSN

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Počet stran výsledku

6

Strana od-do

57-62

Název nakladatele

Elsevier Ltd

Místo vydání

Amsterdam

Místo konání akce

Lille

Datum konání akce

26. 5. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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