Ta-ion implantation induced by a high-intensity laser for plasma diagnostics and target preparation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00454558" target="_blank" >RIV/68378271:_____/15:00454558 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/15:00454558 RIV/60461373:22310/15:43900234 RIV/44555601:13440/15:43886874

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nimb.2015.07.071" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2015.07.071</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2015.07.071" target="_blank" >10.1016/j.nimb.2015.07.071</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ta-ion implantation induced by a high-intensity laser for plasma diagnostics and target preparation

Popis výsledku v původním jazyce

The present work is focused on the implantation of Ta ions into silicon substrates covered by a silicon dioxide layer 50-300 nm thick. The implantation is achieved using sub-nanosecond pulsed laser ablation (10(15) W/cm(2)) with the objective of accelerating non-equilibrium plasma ions. The accelerated Ta ions are implanted into the exposed silicon substrates at energies of approximately 20 keV per charge state. By changing a few variables in the laser pulse, it is possible to control the kinetic energy, the yield and the angular distribution of the emitted ions. Rutherford Back-Scattering analysis was performed using 2.0 MeV He+ as the probe ions to determine the elemental depth profiles and the chemical composition of the laser-implanted substrates. The depth distributions of the implanted Ta ions were compared to SRIM 2012 simulations. The evaluated results of energy distribution were compared with online techniques, such as Ion Collectors (IC) and an Ion Energy Analyser (IEA), for a detailed identification of the produced ion species and their energy-to-charge ratios (M/z). Moreover, XPS (X-ray Photon Spectroscopy) and AFM (Atomic Force Microscopy) analyses were carried out to obtain information on the surface morphology and the chemical composition of the modified implanted layers, as these features are important for further application of such structures.

Název v anglickém jazyce

Ta-ion implantation induced by a high-intensity laser for plasma diagnostics and target preparation

Popis výsledku anglicky

The present work is focused on the implantation of Ta ions into silicon substrates covered by a silicon dioxide layer 50-300 nm thick. The implantation is achieved using sub-nanosecond pulsed laser ablation (10(15) W/cm(2)) with the objective of accelerating non-equilibrium plasma ions. The accelerated Ta ions are implanted into the exposed silicon substrates at energies of approximately 20 keV per charge state. By changing a few variables in the laser pulse, it is possible to control the kinetic energy, the yield and the angular distribution of the emitted ions. Rutherford Back-Scattering analysis was performed using 2.0 MeV He+ as the probe ions to determine the elemental depth profiles and the chemical composition of the laser-implanted substrates. The depth distributions of the implanted Ta ions were compared to SRIM 2012 simulations. The evaluated results of energy distribution were compared with online techniques, such as Ion Collectors (IC) and an Ion Energy Analyser (IEA), for a detailed identification of the produced ion species and their energy-to-charge ratios (M/z). Moreover, XPS (X-ray Photon Spectroscopy) and AFM (Atomic Force Microscopy) analyses were carried out to obtain information on the surface morphology and the chemical composition of the modified implanted layers, as these features are important for further application of such structures.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

—

Svazek periodika

365

Číslo periodika v rámci svazku

DEC

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

384-388

Kód UT WoS článku

000366786900084

EID výsledku v databázi Scopus

2-s2.0-84948586568