Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456839" target="_blank" >RIV/68378271:_____/15:00456839 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/TED.2015.2447216" target="_blank" >http://dx.doi.org/10.1109/TED.2015.2447216</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TED.2015.2447216" target="_blank" >10.1109/TED.2015.2447216</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs

Popis výsledku v původním jazyce

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current?voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.

Název v anglickém jazyce

Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs

Popis výsledku anglicky

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current?voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Electron Devices

ISSN

0018-9383

e-ISSN

—

Svazek periodika

62

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

2562-2570

Kód UT WoS článku

000358507600030

EID výsledku v databázi Scopus

2-s2.0-84937861681