Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00479789" target="_blank" >RIV/68378271:_____/17:00479789 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1134/S1063782617100141" target="_blank" >http://dx.doi.org/10.1134/S1063782617100141</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1063782617100141" target="_blank" >10.1134/S1063782617100141</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Popis výsledku v původním jazyce

Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well grown by MOVPE on an n-InAs substrate is investigated. Shubnikov–de Haas oscillations are measured at two orientations of the magnetic field (perpendicular and parallel) relative to the structure plane. It is established that conduction in the structure under study is occurs via both three-dimensional substrate electrons and two-dimensional QW electrons under quantum limit conditions for bulk electrons (B > 5 T). The electron concentrations in the substrate and InAs QW are determined. The g-factor for 3D carriers is determined by spin splitting of the zero Landau level. It is shown that the conductance maxima in a magnetic field perpendicular to the structure plane and parallel to the current across the structure in fields B > 9 T correspond to the resonant tunneling of 3D electrons from the emitter substrate into the InAs QW through the 2D electron states of the Landau levels.

Název v anglickém jazyce

Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Popis výsledku anglicky

Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well grown by MOVPE on an n-InAs substrate is investigated. Shubnikov–de Haas oscillations are measured at two orientations of the magnetic field (perpendicular and parallel) relative to the structure plane. It is established that conduction in the structure under study is occurs via both three-dimensional substrate electrons and two-dimensional QW electrons under quantum limit conditions for bulk electrons (B > 5 T). The electron concentrations in the substrate and InAs QW are determined. The g-factor for 3D carriers is determined by spin splitting of the zero Landau level. It is shown that the conductance maxima in a magnetic field perpendicular to the structure plane and parallel to the current across the structure in fields B > 9 T correspond to the resonant tunneling of 3D electrons from the emitter substrate into the InAs QW through the 2D electron states of the Landau levels.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductors

ISSN

1063-7826

e-ISSN

—

Svazek periodika

51

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

RU - Ruská federace

Počet stran výsledku

7

Strana od-do

1343-1349

Kód UT WoS článku

000412461400012

EID výsledku v databázi Scopus

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