Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00483209" target="_blank" >RIV/68378271:_____/17:00483209 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD

Popis výsledku v původním jazyce

In this study, we use electronic structures (circular patterns for transition line measurements and high electron mobility transistors) fabricated on AlGaN/GaN heterostructure. The bare samples and samples passivated by thin (30 nm) SiOx, SiNx and SiC coatings were tested. We used high temperature stable Ir/Al multilayer Schottky metallization for gate contact. Diamond films were grown by selective area deposition from CH4/H2 gas mixture using MWCVD at 500°C. The SEM found that any of used protective coating was able to withstand mutual acting of hydrogen and high temperature during diamond deposition process with 100% effectivity. Nevertheless, even bare sample do not demonstrate so severe surface damage as was reported before. The X-ray photoelectron spectroscopy show high level of surface contamination after diamond deposition in particular by carbon while the SIMS reveal the bulk composition down to AlGaN/GaN heterostructure interface and variation of hydrogen amount.

Název v anglickém jazyce

Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD

Popis výsledku anglicky

In this study, we use electronic structures (circular patterns for transition line measurements and high electron mobility transistors) fabricated on AlGaN/GaN heterostructure. The bare samples and samples passivated by thin (30 nm) SiOx, SiNx and SiC coatings were tested. We used high temperature stable Ir/Al multilayer Schottky metallization for gate contact. Diamond films were grown by selective area deposition from CH4/H2 gas mixture using MWCVD at 500°C. The SEM found that any of used protective coating was able to withstand mutual acting of hydrogen and high temperature during diamond deposition process with 100% effectivity. Nevertheless, even bare sample do not demonstrate so severe surface damage as was reported before. The X-ray photoelectron spectroscopy show high level of surface contamination after diamond deposition in particular by carbon while the SIMS reveal the bulk composition down to AlGaN/GaN heterostructure interface and variation of hydrogen amount.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Extended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V

ISBN

978-80-2234411-1

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

13-14

Název nakladatele

Comenius University

Místo vydání

Bratislava

Místo konání akce

Florence

Datum konání akce

20. 11. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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