Radiation resistance of nanolayered silicon nitride capacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00533408" target="_blank" >RIV/68378271:_____/20:00533408 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.nimb.2020.03.010" target="_blank" >https://doi.org/10.1016/j.nimb.2020.03.010</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2020.03.010" target="_blank" >10.1016/j.nimb.2020.03.010</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Radiation resistance of nanolayered silicon nitride capacitors

Popis výsledku v původním jazyce

Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation did not influence the breakdown voltage of the capacitors but decreased their capacitance measured at 1 MHz frequency.

Název v anglickém jazyce

Radiation resistance of nanolayered silicon nitride capacitors

Popis výsledku anglicky

Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation did not influence the breakdown voltage of the capacitors but decreased their capacitance measured at 1 MHz frequency.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

—

Svazek periodika

471

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

17-23

Kód UT WoS článku

000525316900004

EID výsledku v databázi Scopus

2-s2.0-85082603092