GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536206" target="_blank" >RIV/68378271:_____/20:00536206 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2020.145903" target="_blank" >https://doi.org/10.1016/j.apsusc.2020.145903</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2020.145903" target="_blank" >10.1016/j.apsusc.2020.145903</a>

Jazyk výsledku

angličtina

Název v původním jazyce

GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering

Popis výsledku v původním jazyce

THere we applied gas cluster ion beam sputtering in combination with in-situ XPS (GCIB-XPS) to analyze buried GaP/Si(001) heterointerfaces. The GCIB method was used to dig a crater into the 20 nm thick GaP(001) film. We found optimal parameters for GCIB sputtering and achieved interface layers without severe damage. Destructive effects, i.e. broadening of core level peaks, could not be completely avoided, however, and the formation of metallic Ga on the GaP surface was observed. Photoemission spectra of the sputtered heterostructures were compared with corresponding reference spectra of sputtered bulk crystals. Interface contributions to the intensity of phosphorus and sillicon core level peaks were revealed. Similar results were obtained on 4 nm thick GaP/Si(001) by XPS. Finally, a top-to-bottom concept for buried semiconductor interfaces studies by GCIB-XPS is demonstrated.

Název v anglickém jazyce

GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering

Popis výsledku anglicky

THere we applied gas cluster ion beam sputtering in combination with in-situ XPS (GCIB-XPS) to analyze buried GaP/Si(001) heterointerfaces. The GCIB method was used to dig a crater into the 20 nm thick GaP(001) film. We found optimal parameters for GCIB sputtering and achieved interface layers without severe damage. Destructive effects, i.e. broadening of core level peaks, could not be completely avoided, however, and the formation of metallic Ga on the GaP surface was observed. Photoemission spectra of the sputtered heterostructures were compared with corresponding reference spectra of sputtered bulk crystals. Interface contributions to the intensity of phosphorus and sillicon core level peaks were revealed. Similar results were obtained on 4 nm thick GaP/Si(001) by XPS. Finally, a top-to-bottom concept for buried semiconductor interfaces studies by GCIB-XPS is demonstrated.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

514

Číslo periodika v rámci svazku

Jun

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000523185200046

EID výsledku v databázi Scopus

2-s2.0-85080891661