Properties of yellow band in GaN layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00537999" target="_blank" >RIV/68378271:_____/20:00537999 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Properties of yellow band in GaN layers

Popis výsledku v původním jazyce

Luminescence properties of n-doped GaN layer, grown with specific growth condition to obtain high carbon concentration in layer, were studied. Room temperature PL spectrum showed very strong YB intensity and suppressed GaN excitonic band. Properties of YB were studied by low temperature PL measurement and decay time measurement. Shape of the YB was analysed with one-dimensional configuration coordinate model and it was shown that the YB properties are similar to properties of YB caused by carbon-related defect (CN). Our PL results are in a good agreement with SIMS analysis, where higher carbon concentration was detected. Decay time of YB is in the hundreds of microseconds. This value corresponds to published results of other groups. Low temperature PL measurement is a good tool for investigation the source of YB in different MOVPE grown GaN layers. Understanding of the origin of YB can help technologists to improve the growth process and eliminate YB source.

Název v anglickém jazyce

Properties of yellow band in GaN layers

Popis výsledku anglicky

Luminescence properties of n-doped GaN layer, grown with specific growth condition to obtain high carbon concentration in layer, were studied. Room temperature PL spectrum showed very strong YB intensity and suppressed GaN excitonic band. Properties of YB were studied by low temperature PL measurement and decay time measurement. Shape of the YB was analysed with one-dimensional configuration coordinate model and it was shown that the YB properties are similar to properties of YB caused by carbon-related defect (CN). Our PL results are in a good agreement with SIMS analysis, where higher carbon concentration was detected. Decay time of YB is in the hundreds of microseconds. This value corresponds to published results of other groups. Low temperature PL measurement is a good tool for investigation the source of YB in different MOVPE grown GaN layers. Understanding of the origin of YB can help technologists to improve the growth process and eliminate YB source.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

20th Conference of Czech and Slovak Physicists Proceedings

ISBN

978-80-89855-13-1

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

149-150

Název nakladatele

Slovak Physical Society, Czech Physical Society

Místo vydání

Košice

Místo konání akce

Prague

Datum konání akce

7. 9. 2020

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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