Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00556013" target="_blank" >RIV/68378271:_____/22:00556013 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11310/22:10438973

Výsledek na webu

<a href="https://doi.org/10.1016/j.diamond.2021.108815" target="_blank" >https://doi.org/10.1016/j.diamond.2021.108815</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2021.108815" target="_blank" >10.1016/j.diamond.2021.108815</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

Popis výsledku v původním jazyce

The use of {113} oriented single crystal diamond substrates has been reported for CVD growth of high-quality p-type layers with increased doping efficiency, compared to the {100} orientation, and excellent electrical properties. In this work we expand the range of crystal orientations to include the {118} and {115} planes and study the effect of B doping level in the gas phase with B/C ratios from 250 up to 2000 ppm. We demonstrate the growth of high-quality B doped SCD layers, with low RMS roughness (<2 nm) and high surface chemical purity (99% C with >1% B) for all orientations. Boron incorporation is shown to be dependent not only on the B/C in the gas phase, but also on the crystallographic orientation, with orientations with a higher density of {100}/{111} steps and risers exhibiting higher B incorporation into the solid from the gas phase (4 × 1019 cm−3 up to 1 × 1021 cm−3). Finally, using electro-chemical techniques, we confirm, for the first-time, high-quality electrodes on such orientations.

Název v anglickém jazyce

Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

Popis výsledku anglicky

The use of {113} oriented single crystal diamond substrates has been reported for CVD growth of high-quality p-type layers with increased doping efficiency, compared to the {100} orientation, and excellent electrical properties. In this work we expand the range of crystal orientations to include the {118} and {115} planes and study the effect of B doping level in the gas phase with B/C ratios from 250 up to 2000 ppm. We demonstrate the growth of high-quality B doped SCD layers, with low RMS roughness (<2 nm) and high surface chemical purity (99% C with >1% B) for all orientations. Boron incorporation is shown to be dependent not only on the B/C in the gas phase, but also on the crystallographic orientation, with orientations with a higher density of {100}/{111} steps and risers exhibiting higher B incorporation into the solid from the gas phase (4 × 1019 cm−3 up to 1 × 1021 cm−3). Finally, using electro-chemical techniques, we confirm, for the first-time, high-quality electrodes on such orientations.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

123

Číslo periodika v rámci svazku

Mar

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

8

Strana od-do

108815

Kód UT WoS článku

000873439200001

EID výsledku v databázi Scopus

2-s2.0-85124231733