The impact of plasmonic electrodes on the photocarrier extraction of inverted organic bulk heterojunction solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00571634" target="_blank" >RIV/68378271:_____/23:00571634 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0346101" target="_blank" >https://hdl.handle.net/11104/0346101</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00339-023-06492-6" target="_blank" >10.1007/s00339-023-06492-6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The impact of plasmonic electrodes on the photocarrier extraction of inverted organic bulk heterojunction solar cells

Popis výsledku v původním jazyce

Nano-patterning the semiconducting photoactive layer/back electrode interface of organic photovoltaic devices is a widely accepted approach to enhance the power conversion efficiency through the exploitation of numerous photonic and plas- monic effects. Yet, nano-patterning the semiconductor/metal interface leads to intertwined effects that impact the optical as well as the electrical characteristic of solar cells. In this work we aim to disentangle the optical and electrical effects of a nano-structured semiconductor/metal interface on the device performance. For this, we use an inverted bulk heterojunction P3HT:PCBM solar cell structure, where the nano-patterned photoactive layer/back electrode interface is realized by pattern- ing the active layer with sinusoidal grating profiles bearing a periodicity of 300 nm or 400 nm through imprint lithography while varying the photoactive layer thickness (LPAL) between 90 and 400 nm.

Název v anglickém jazyce

The impact of plasmonic electrodes on the photocarrier extraction of inverted organic bulk heterojunction solar cells

Popis výsledku anglicky

Nano-patterning the semiconducting photoactive layer/back electrode interface of organic photovoltaic devices is a widely accepted approach to enhance the power conversion efficiency through the exploitation of numerous photonic and plas- monic effects. Yet, nano-patterning the semiconductor/metal interface leads to intertwined effects that impact the optical as well as the electrical characteristic of solar cells. In this work we aim to disentangle the optical and electrical effects of a nano-structured semiconductor/metal interface on the device performance. For this, we use an inverted bulk heterojunction P3HT:PCBM solar cell structure, where the nano-patterned photoactive layer/back electrode interface is realized by pattern- ing the active layer with sinusoidal grating profiles bearing a periodicity of 300 nm or 400 nm through imprint lithography while varying the photoactive layer thickness (LPAL) between 90 and 400 nm.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics A - Materials Science & Processing

ISSN

0947-8396

e-ISSN

1432-0630

Svazek periodika

129

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

16

Strana od-do

230

Kód UT WoS článku

000942300100001

EID výsledku v databázi Scopus

2-s2.0-85149422817