Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00585191" target="_blank" >RIV/68378271:_____/24:00585191 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/5.0200233" target="_blank" >https://doi.org/10.1063/5.0200233</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0200233" target="_blank" >10.1063/5.0200233</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power

Popis výsledku v původním jazyce

Here, we investigate the effect of N2 addition in MWPECVD on the growth of thick {113} epitaxial diamond layers. We identify a narrow range of N2 concentrations for the growth of crack-free thick layers with a smooth surface morphology. Without N2, cracks start to appear after a layer thickness of 7–10 μm due to elastic energy stored in the layer, but the addition of N2 stabilizes growth. We also investigate the use of low MW power density growth conditions to produce thick B-doped layers, where we observe a very high B incorporation efficiency. Finally, we demonstrate the fabrication of a thick (>200 μm) {113} p+ monocrystal. The concentration of B has been investigated by Hall effect, Raman, and SIMS. The growth of high quality thick {113} epitaxial layer with high B concentration (>1020 cm−3) and low resistivity and the fabrication of freestanding p+ substrates are necessary steps for vertical electronic devices such as high power Schottky diodes.

Název v anglickém jazyce

Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power

Popis výsledku anglicky

Here, we investigate the effect of N2 addition in MWPECVD on the growth of thick {113} epitaxial diamond layers. We identify a narrow range of N2 concentrations for the growth of crack-free thick layers with a smooth surface morphology. Without N2, cracks start to appear after a layer thickness of 7–10 μm due to elastic energy stored in the layer, but the addition of N2 stabilizes growth. We also investigate the use of low MW power density growth conditions to produce thick B-doped layers, where we observe a very high B incorporation efficiency. Finally, we demonstrate the fabrication of a thick (>200 μm) {113} p+ monocrystal. The concentration of B has been investigated by Hall effect, Raman, and SIMS. The growth of high quality thick {113} epitaxial layer with high B concentration (>1020 cm−3) and low resistivity and the fabrication of freestanding p+ substrates are necessary steps for vertical electronic devices such as high power Schottky diodes.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

1077-3118

Svazek periodika

124

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

16

Strana od-do

161904

Kód UT WoS článku

001202667700025

EID výsledku v databázi Scopus

2-s2.0-85190780052