In-line thickness imaging tool and detail study of interdigitated back-contacts for silicon heterojunction solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00617446" target="_blank" >RIV/68378271:_____/25:00617446 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.solmat.2025.113475" target="_blank" >https://doi.org/10.1016/j.solmat.2025.113475</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.solmat.2025.113475" target="_blank" >10.1016/j.solmat.2025.113475</a>

Jazyk výsledku

angličtina

Název v původním jazyce

In-line thickness imaging tool and detail study of interdigitated back-contacts for silicon heterojunction solar cells

Popis výsledku v původním jazyce

Absorption of excitation light in silicon thin films reduces the photoluminescence signal of the underlying rough crystalline silicon substrate. We exploit this phenomenon to develop a contactless and fast imaging method for measuring the thickness of thin and ultra-thin films deposited on rough substrates. We test this technique on thin amorphous or microcrystalline silicon stripes deposited on rough silicon surfaces, a structure used in highefficiency silicon heterojunction solar cells. The AFM and UV Raman study revealed local inhomogeneities in film coverage and crystallinity, which could directly impact the final quality of the solar cell. For independent thickness verification, a precise but time-consuming Raman microspectroscopy-based measurement was employed. A newly developed fast photoluminescence imaging reduces the measurement time below 0.4 s while maintaining a thickness detection limit below 1 nm. This enables the use of this imaging method as an in-line characterization tool for interdigitated back-contact silicon photovoltaic production.

Název v anglickém jazyce

In-line thickness imaging tool and detail study of interdigitated back-contacts for silicon heterojunction solar cells

Popis výsledku anglicky

Absorption of excitation light in silicon thin films reduces the photoluminescence signal of the underlying rough crystalline silicon substrate. We exploit this phenomenon to develop a contactless and fast imaging method for measuring the thickness of thin and ultra-thin films deposited on rough substrates. We test this technique on thin amorphous or microcrystalline silicon stripes deposited on rough silicon surfaces, a structure used in highefficiency silicon heterojunction solar cells. The AFM and UV Raman study revealed local inhomogeneities in film coverage and crystallinity, which could directly impact the final quality of the solar cell. For independent thickness verification, a precise but time-consuming Raman microspectroscopy-based measurement was employed. A newly developed fast photoluminescence imaging reduces the measurement time below 0.4 s while maintaining a thickness detection limit below 1 nm. This enables the use of this imaging method as an in-line characterization tool for interdigitated back-contact silicon photovoltaic production.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2023051" target="_blank" >LM2023051: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solar Energy Materials and Solar Cells

ISSN

0927-0248

e-ISSN

1879-3398

Svazek periodika

283

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

113475

Kód UT WoS článku

001417069800001

EID výsledku v databázi Scopus

2-s2.0-85216575775