Role of oxygen in suppression of boron incorporation in diamond films: Surface reactions insight

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00637516" target="_blank" >RIV/68378271:_____/25:00637516 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2025.163832" target="_blank" >https://doi.org/10.1016/j.apsusc.2025.163832</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2025.163832" target="_blank" >10.1016/j.apsusc.2025.163832</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Role of oxygen in suppression of boron incorporation in diamond films: Surface reactions insight

Popis výsledku v původním jazyce

This study explores the underlying mechanisms through which oxygen-containing species suppress boron incorporation in diamond films grown via chemical vapor deposition. A comprehensive understanding of the mechanisms affecting the boron incorporation is crucial for achieving effective control over the doping process. Our experiments demonstrate significantly suppressed boron incorporation after the addition of CO2 to the gas mixture. A notable divergence is observed between the suppression of BH emission intensity in plasma and the actual B incorporation into the diamond layer across a wide range of B/C ratios. Contrary to previous hypotheses attributing the suppression solely to gas phase boron depletion, our findings indicate that surface-related reactions are the primary mechanism. Density functional theory calculations reveal that oxygen and OH radicals promote the desorption of boron-containing species, such as OBH, from the diamond surface, whereas CO and CO2 desorb from the surface without detaching the B atom. The experimental results and theoretical calculations suggest that oxygen hinders boron incorporation into the diamond lattice by forming volatile oxygen-boron compounds and by occupation of surface sites. Our study provides new mechanistic insights into pathways for precise control of boron incorporation, allowing the optimization of boron-doped diamond properties for advanced electronic and electrochemical applications.

Název v anglickém jazyce

Role of oxygen in suppression of boron incorporation in diamond films: Surface reactions insight

Popis výsledku anglicky

This study explores the underlying mechanisms through which oxygen-containing species suppress boron incorporation in diamond films grown via chemical vapor deposition. A comprehensive understanding of the mechanisms affecting the boron incorporation is crucial for achieving effective control over the doping process. Our experiments demonstrate significantly suppressed boron incorporation after the addition of CO2 to the gas mixture. A notable divergence is observed between the suppression of BH emission intensity in plasma and the actual B incorporation into the diamond layer across a wide range of B/C ratios. Contrary to previous hypotheses attributing the suppression solely to gas phase boron depletion, our findings indicate that surface-related reactions are the primary mechanism. Density functional theory calculations reveal that oxygen and OH radicals promote the desorption of boron-containing species, such as OBH, from the diamond surface, whereas CO and CO2 desorb from the surface without detaching the B atom. The experimental results and theoretical calculations suggest that oxygen hinders boron incorporation into the diamond lattice by forming volatile oxygen-boron compounds and by occupation of surface sites. Our study provides new mechanistic insights into pathways for precise control of boron incorporation, allowing the optimization of boron-doped diamond properties for advanced electronic and electrochemical applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

709

Číslo periodika v rámci svazku

Nov

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

163832

Kód UT WoS článku

001517673400008

EID výsledku v databázi Scopus

2-s2.0-105008518303