Nanostruktury definovano pomocí lokální anodické oxidace feromagnetické vrstvy GaMnAs

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nanostructures Defined by The Local Oxidation of Ferromagnetic GaMnAs Layer

Popis výsledku v původním jazyce

The results of Local Anodic Oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low temperature MBE growth in a Veeco Mod Gen II machine. The LAO process was performed with the AFM microscope Smena NT-MDT placed in the sealed box with the controlled humidity in the range 45-80%. The oxide was grown in the semi-contact mode of the AFM. Sample was positively biased with respect to the AFM tip with the bias from 6 to 24 V. The conductive diamond coated AFM tips with the radius 30 nm were utilized for the oxidation. The tip speed during the oxidation was changed from 400 nm/s to 1.5 um/s. The tip force was also changed during the oxidation. The height of oxide nanolines increases with applied voltage from 3 to 18 nm. The width of these lines was approximately 100 nm at half of the maximum.

Název v anglickém jazyce

Nanostructures Defined by The Local Oxidation of Ferromagnetic GaMnAs Layer

Popis výsledku anglicky

The results of Local Anodic Oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low temperature MBE growth in a Veeco Mod Gen II machine. The LAO process was performed with the AFM microscope Smena NT-MDT placed in the sealed box with the controlled humidity in the range 45-80%. The oxide was grown in the semi-contact mode of the AFM. Sample was positively biased with respect to the AFM tip with the bias from 6 to 24 V. The conductive diamond coated AFM tips with the radius 30 nm were utilized for the oxidation. The tip speed during the oxidation was changed from 400 nm/s to 1.5 um/s. The tip force was also changed during the oxidation. The height of oxide nanolines increases with applied voltage from 3 to 18 nm. The width of these lines was approximately 100 nm at half of the maximum.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

European Nano Systems

ISBN

978-2-35500-003-4

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

85-90

Název nakladatele

CMP

Místo vydání

Grenoble

Místo konání akce

Paris

Datum konání akce

3. 12. 2007

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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