Nanostruktury definované lokální anodickou oxidací fromagnetických vrstev GaMnAs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A03151139" target="_blank" >RIV/68407700:21230/09:03151139 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer

Popis výsledku v původním jazyce

The results of local anodic oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low-temperature molecular beam epitaxy (MBE) growth in a Veeco Mod Gen II machine. The LAO process was performed with theatomic force microscope (AFM) Smena NT-MDT placed in the sealed box with the controlled humidity in the range 45-80%. The oxide was grown in the semi-contact mode of the AFM. The sample was positively biased with respect to the AFM tip with the bias from 6 to 24V. The conductive diamond-coated AFM tips with the radius 30nm were utilized for the oxidation. The tip speed during the oxidation was changed from 400 nm/s to 1.5 mm/s. The tip force was also changed during the oxidation. The height of oxide nanolines increases with applied voltage from 3 to 18 nm. The width of these lines was approximately 100 nm at half-maximum.

Název v anglickém jazyce

Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer

Popis výsledku anglicky

The results of local anodic oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low-temperature molecular beam epitaxy (MBE) growth in a Veeco Mod Gen II machine. The LAO process was performed with theatomic force microscope (AFM) Smena NT-MDT placed in the sealed box with the controlled humidity in the range 45-80%. The oxide was grown in the semi-contact mode of the AFM. The sample was positively biased with respect to the AFM tip with the bias from 6 to 24V. The conductive diamond-coated AFM tips with the radius 30nm were utilized for the oxidation. The tip speed during the oxidation was changed from 400 nm/s to 1.5 mm/s. The tip force was also changed during the oxidation. The height of oxide nanolines increases with applied voltage from 3 to 18 nm. The width of these lines was approximately 100 nm at half-maximum.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronics Journal

ISSN

0026-2692

e-ISSN

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Svazek periodika

40

Číslo periodika v rámci svazku

4-5

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

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Kód UT WoS článku

000265870200009

EID výsledku v databázi Scopus

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