Design and Fabrication of Piezoresistive Strain-Gauges for Harsh Environment Applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00171671" target="_blank" >RIV/68407700:21230/10:00171671 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Design and Fabrication of Piezoresistive Strain-Gauges for Harsh Environment Applications

Popis výsledku v původním jazyce

Maximum operating temperature is usually one of the limiting factors for using of conventional sensors and other electronic devices. High-temperature sensors and electronics are required in some special applications e.g. measurement of deformations, stresses and pressures inside power generators. The design methodology of the some piezoresistive sensors utilizing FEM simulations is presented. Piezoresistive sensors based on thin-film metal sputtered layers, silicon-on-insulator (SOI) and nanocrystallinediamond layers (NCD) were successfully designed, fabricated and measured. The fabricated sensors are able to operate at temperatures up to 250 °C. Extensive study of sensor parameters e.g. deformation sensitivity, edge and contact resistances, temperature dependences gauge factor, bridge output voltage was performed. The measured values and investigated findings can be used for calibration of simulation software and in prospective design of more complex sensor structures.

Název v anglickém jazyce

Design and Fabrication of Piezoresistive Strain-Gauges for Harsh Environment Applications

Popis výsledku anglicky

Maximum operating temperature is usually one of the limiting factors for using of conventional sensors and other electronic devices. High-temperature sensors and electronics are required in some special applications e.g. measurement of deformations, stresses and pressures inside power generators. The design methodology of the some piezoresistive sensors utilizing FEM simulations is presented. Piezoresistive sensors based on thin-film metal sputtered layers, silicon-on-insulator (SOI) and nanocrystallinediamond layers (NCD) were successfully designed, fabricated and measured. The fabricated sensors are able to operate at temperatures up to 250 °C. Extensive study of sensor parameters e.g. deformation sensitivity, edge and contact resistances, temperature dependences gauge factor, bridge output voltage was performed. The measured values and investigated findings can be used for calibration of simulation software and in prospective design of more complex sensor structures.

Druh

D - Stať ve sborníku

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F1601" target="_blank" >GA102/09/1601: Inteligentní mikro a nano struktury pro mikrosenzory realizované s využitím nanotechnologií</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

International Conference on Renewable Energies and Power Quality ICREPQ'10

ISBN

978-84-613-7543-1

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Universidad de Vigo

Místo vydání

Vigo

Místo konání akce

Granada

Datum konání akce

23. 3. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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