Investigation of Flicker Noise in Silicon Diodes under Reverse Bias

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00190036" target="_blank" >RIV/68407700:21230/12:00190036 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.microrel.2011.10.021" target="_blank" >http://dx.doi.org/10.1016/j.microrel.2011.10.021</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.microrel.2011.10.021" target="_blank" >10.1016/j.microrel.2011.10.021</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of Flicker Noise in Silicon Diodes under Reverse Bias

Popis výsledku v původním jazyce

This article analyses some connections between the reverse properties of silicon power diodes and their flicker noise under reverse bias conditions. It is shown that the presence of defects in the silicon surface near the pn-junction termination has a significant influence on both the reverse VA characteristics (RVAC) and the low-frequency power noise of diodes under reverse bias conditions. However, the inherent relationship between both effects becomes apparent only under special conditions and by theuse of sophisticated measurements. The article presents a simple physical model, describing the behaviour and effect of surface structural defects on the silicon surfaces in connection with the reverse and noise properties of the tested diodes. The model identifies and consequently performs the mutual relationships with respect to the physical nature of the investigated defects. The most important practical contribution of this article is to identify a simple way to reveal latent defect

Název v anglickém jazyce

Investigation of Flicker Noise in Silicon Diodes under Reverse Bias

Popis výsledku anglicky

This article analyses some connections between the reverse properties of silicon power diodes and their flicker noise under reverse bias conditions. It is shown that the presence of defects in the silicon surface near the pn-junction termination has a significant influence on both the reverse VA characteristics (RVAC) and the low-frequency power noise of diodes under reverse bias conditions. However, the inherent relationship between both effects becomes apparent only under special conditions and by theuse of sophisticated measurements. The article presents a simple physical model, describing the behaviour and effect of surface structural defects on the silicon surfaces in connection with the reverse and noise properties of the tested diodes. The model identifies and consequently performs the mutual relationships with respect to the physical nature of the investigated defects. The most important practical contribution of this article is to identify a simple way to reveal latent defect

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronics Reliability

ISSN

0026-2714

e-ISSN

—

Svazek periodika

52

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

469-474

Kód UT WoS článku

000302045400003

EID výsledku v databázi Scopus

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