Influence of surface states on reverse and noise properties of silicon

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of surface states on reverse and noise properties of silicon

Popis výsledku v původním jazyce

This contribution investigates transient degradation of reverse characteristics of diodes. This effect appears immediately after external heating or after a long time on-state polarization of diodes (without significant temperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power (measured under low voltage reverse bias) is influenced. Common factor (which acts on both reverse and noise properties of diodes) is connected with so called surface states. The slow surface states (SSS) are caused by presence of material process induced defects in the region of p-n junction surface termination. SSS have fundamental impact on reverse properties of diodes and their low frequency noise behavior. The kinetics of processes evoked by temperature heating of diodes is described in former study. Presented article extends interest also on changes induced by on-state polarization of diodes. Inherent connection between SSS on semiconductor-

Název v anglickém jazyce

Influence of surface states on reverse and noise properties of silicon

Popis výsledku anglicky

This contribution investigates transient degradation of reverse characteristics of diodes. This effect appears immediately after external heating or after a long time on-state polarization of diodes (without significant temperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power (measured under low voltage reverse bias) is influenced. Common factor (which acts on both reverse and noise properties of diodes) is connected with so called surface states. The slow surface states (SSS) are caused by presence of material process induced defects in the region of p-n junction surface termination. SSS have fundamental impact on reverse properties of diodes and their low frequency noise behavior. The kinetics of processes evoked by temperature heating of diodes is described in former study. Presented article extends interest also on changes induced by on-state polarization of diodes. Inherent connection between SSS on semiconductor-

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ISPS'12 PROCEEDINGS

ISBN

978-80-01-05100-9

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

173-177

Název nakladatele

České vysoké učení technické v Praze

Místo vydání

Praha

Místo konání akce

Praha

Datum konání akce

28. 8. 2012

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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