Influence of surface states on the reverse and noise properties of silicon power diodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00217727" target="_blank" >RIV/68407700:21230/14:00217727 - isvavai.cz</a>

Výsledek na webu

<a href="http://digital-library.theiet.org/content/journals/10.1049/iet-cds.2013.0219" target="_blank" >http://digital-library.theiet.org/content/journals/10.1049/iet-cds.2013.0219</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1049/iet-cds.2013.0219" target="_blank" >10.1049/iet-cds.2013.0219</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of surface states on the reverse and noise properties of silicon power diodes

Popis výsledku v původním jazyce

This contribution investigates transient degradation of reverse characteristics of diodes by means of a noise measurement. This effect appears immediately after external heating or after a long time on-state polarisation of diodes (without a significanttemperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power measured under a low voltage DC reverse bias is influenced. The first possible cause of these effects is connected with so calledslow surface states (SSS). The SSS are caused by the presence of material process induced defects in the region of a p-n junction surface termination. SSS have fundamental impact on the reverse properties of diodes and their low frequency noise behaviour. The second cause is connected with so called volume structural defects (VSD). Their origin can be genetic (e.g. the presence of imperfection inside a silicon crystal) or they can be induced during technological processing. These defect

Název v anglickém jazyce

Influence of surface states on the reverse and noise properties of silicon power diodes

Popis výsledku anglicky

This contribution investigates transient degradation of reverse characteristics of diodes by means of a noise measurement. This effect appears immediately after external heating or after a long time on-state polarisation of diodes (without a significanttemperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power measured under a low voltage DC reverse bias is influenced. The first possible cause of these effects is connected with so calledslow surface states (SSS). The SSS are caused by the presence of material process induced defects in the region of a p-n junction surface termination. SSS have fundamental impact on the reverse properties of diodes and their low frequency noise behaviour. The second cause is connected with so called volume structural defects (VSD). Their origin can be genetic (e.g. the presence of imperfection inside a silicon crystal) or they can be induced during technological processing. These defect

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

—

Návaznosti

N - Vyzkumna aktivita podporovana z neverejnych zdroju

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IET Circuits, Devices & Systems

ISSN

1751-858X

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

213-220

Kód UT WoS článku

000337942500009

EID výsledku v databázi Scopus

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