High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00205090" target="_blank" >RIV/68407700:21230/13:00205090 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.elsevier.com/locate/microrel" target="_blank" >http://www.elsevier.com/locate/microrel</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.microrel.2013.02.008" target="_blank" >10.1016/j.microrel.2013.02.008</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation

Popis výsledku v původním jazyce

Large-area silicon P?i?N diodes (VRRM = 4.5 kV) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degC.

Název v anglickém jazyce

High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation

Popis výsledku anglicky

Large-area silicon P?i?N diodes (VRRM = 4.5 kV) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degC.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

N - Vyzkumna aktivita podporovana z neverejnych zdroju

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronics Reliability

ISSN

0026-2714

e-ISSN

—

Svazek periodika

53

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

681-686

Kód UT WoS článku

000318838400005

EID výsledku v databázi Scopus

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