ESD LVTSCR model calibration by differential evolutionary optimization algorithm

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

ESD LVTSCR model calibration by differential evolutionary optimization algorithm

Popis výsledku v původním jazyce

This paper presents the possibility to use modern optimization algorithm called Differential Evolution to automatically fit the measured data from test chip to the LVTSCR (Low Voltage-Triggered Silicon-Controlled Rectifier) electrostatic discharge (ESD)model without the need of manual model-parameters tuning. In contrast with proposed method the traditional approach using many specific measurements for specific properties quantification can be very time and resource consuming. To the best knowledge ofthe authors, this novel approach has never been previously used by any research group. Authors developed this method for ESD MOSFET model calibration and in this paper the validation for LVTSCR model is being presented. Short introduction to ESD LVTSCR function and properties are presented. Finally, results of fitting the macro-model of LVTSCR to the empirical piece-wise linear I-V characteristic created based on general properties of LVTSCR are summarized.

Název v anglickém jazyce

ESD LVTSCR model calibration by differential evolutionary optimization algorithm

Popis výsledku anglicky

This paper presents the possibility to use modern optimization algorithm called Differential Evolution to automatically fit the measured data from test chip to the LVTSCR (Low Voltage-Triggered Silicon-Controlled Rectifier) electrostatic discharge (ESD)model without the need of manual model-parameters tuning. In contrast with proposed method the traditional approach using many specific measurements for specific properties quantification can be very time and resource consuming. To the best knowledge ofthe authors, this novel approach has never been previously used by any research group. Authors developed this method for ESD MOSFET model calibration and in this paper the validation for LVTSCR model is being presented. Short introduction to ESD LVTSCR function and properties are presented. Finally, results of fitting the macro-model of LVTSCR to the empirical piece-wise linear I-V characteristic created based on general properties of LVTSCR are summarized.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

LASCAS 2013

ISBN

978-1-4244-9485-9

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

IEEE

Místo vydání

Piscataway

Místo konání akce

Cusco

Datum konání akce

27. 2. 2013

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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