ON-state characteristics of proton irradiated 4H?SiC Schottky diode: The calibration of model parameters for device simulation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00213904" target="_blank" >RIV/68407700:21230/14:00213904 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.elsevier.com/locate/sse" target="_blank" >http://www.elsevier.com/locate/sse</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.sse.2014.02.004" target="_blank" >10.1016/j.sse.2014.02.004</a>

Jazyk výsledku

angličtina

Název v původním jazyce

ON-state characteristics of proton irradiated 4H?SiC Schottky diode: The calibration of model parameters for device simulation

Popis výsledku v původním jazyce

4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C?V profiling and forward I?V curves. Calibration procedure ofmodel parameters for device simulation as been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement of simulated andmeasured forward I?V curves of proton irradiated diodes can be achieved, if the profiles of deep levels are calibrated with respect to irradiation dose, the degradation of electron mobility due to charged deep levels is accounted of and the Schottky barrier height is properly adjusted. The proposed methodology introduces a starting point for exact calibration of ion irradiated SiC unipolar devices.

Název v anglickém jazyce

ON-state characteristics of proton irradiated 4H?SiC Schottky diode: The calibration of model parameters for device simulation

Popis výsledku anglicky

4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C?V profiling and forward I?V curves. Calibration procedure ofmodel parameters for device simulation as been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement of simulated andmeasured forward I?V curves of proton irradiated diodes can be achieved, if the profiles of deep levels are calibrated with respect to irradiation dose, the degradation of electron mobility due to charged deep levels is accounted of and the Schottky barrier height is properly adjusted. The proposed methodology introduces a starting point for exact calibration of ion irradiated SiC unipolar devices.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Poruchy v širokopásových polovodičích a jejich význam pro výkonovou a vysokoteplotní elektroniku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solid-State Electronics

ISSN

0038-1101

e-ISSN

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Svazek periodika

94

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

32-38

Kód UT WoS článku

000334097000008

EID výsledku v databázi Scopus

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