Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00229932" target="_blank" >RIV/68407700:21230/15:00229932 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/TED.2015.2421503" target="_blank" >http://dx.doi.org/10.1109/TED.2015.2421503</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TED.2015.2421503" target="_blank" >10.1109/TED.2015.2421503</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

Popis výsledku v původním jazyce

The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C–V(T), and I–V measurements without postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley–Read–Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.

Název v anglickém jazyce

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

Popis výsledku anglicky

The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C–V(T), and I–V measurements without postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley–Read–Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Poruchy v širokopásových polovodičích a jejich význam pro výkonovou a vysokoteplotní elektroniku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Electron Devices

ISSN

0018-9383

e-ISSN

1557-9646

Svazek periodika

62

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

1964-1969

Kód UT WoS článku

000355405800042

EID výsledku v databázi Scopus

2-s2.0-84970913580