Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part I: Drain Current and Transconductances

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00322566" target="_blank" >RIV/68407700:21230/18:00322566 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8371530" target="_blank" >https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8371530</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TED.2018.2838101" target="_blank" >10.1109/TED.2018.2838101</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part I: Drain Current and Transconductances

Popis výsledku v původním jazyce

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of not only device fabrication but also its operation. The device has been largely used in low-noise applications, but also more recently, in power electronics. Physics-based compact models for JFETs, contrary to MOSFETs, are, however, scarce. In this paper, an analytical, charge-based model is established for the mobile charges, drain current, and transconductances of symmetric DG JFETs, covering all regions of device operation. The model is unified and continuous from subthreshold to linear and saturation operation and is valid over a large temperature range. This charge-based model constitutes the basis of a full compact model of the DG JFET.

Název v anglickém jazyce

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part I: Drain Current and Transconductances

Popis výsledku anglicky

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of not only device fabrication but also its operation. The device has been largely used in low-noise applications, but also more recently, in power electronics. Physics-based compact models for JFETs, contrary to MOSFETs, are, however, scarce. In this paper, an analytical, charge-based model is established for the mobile charges, drain current, and transconductances of symmetric DG JFETs, covering all regions of device operation. The model is unified and continuous from subthreshold to linear and saturation operation and is valid over a large temperature range. This charge-based model constitutes the basis of a full compact model of the DG JFET.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Electron Devices

ISSN

0018-9383

e-ISSN

1557-9646

Svazek periodika

65

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

2744-2750

Kód UT WoS článku

000435546700010

EID výsledku v databázi Scopus

2-s2.0-85048013186