Effect of Cu Substrate Roughness and Sn Layer Thickness on Whisker Development from Sn Thin-Films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00337343" target="_blank" >RIV/68407700:21230/19:00337343 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.3390/ma12213609" target="_blank" >https://doi.org/10.3390/ma12213609</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/ma12213609" target="_blank" >10.3390/ma12213609</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of Cu Substrate Roughness and Sn Layer Thickness on Whisker Development from Sn Thin-Films

Popis výsledku v původním jazyce

The effect of copper substrate roughness and tin layer thickness were investigated on whisker development in the case of Sn thin-films. Sn was vacuum-evaporated onto both unpolished and mechanically polished Cu substrates with 1 mu m and 2 mu m average layer thicknesses. The samples were stored in room conditions for 60 days. The considerable stress-developed by the rapid intermetallic layer formation-resulted in intensive whisker formation, even in some days after the layer deposition. The developed whiskers and the layer structure underneath them were investigated with both scanning electron microscopy and ion microscopy. The Sn thin-film deposited onto unpolished Cu substrate produced less but longer whiskers than that deposited onto polished Cu substrate. This phenomenon might be explained by the dependence of IML formation on the surface roughness of substrates. The formation of IML wedges is more likely on rougher Cu substrates than on polished ones. Furthermore, it was found that with the decrease of layer thickness, the development of nodule type whiskers increases due to the easier diffusion of other atoms into the whisker bodies.

Název v anglickém jazyce

Effect of Cu Substrate Roughness and Sn Layer Thickness on Whisker Development from Sn Thin-Films

Popis výsledku anglicky

The effect of copper substrate roughness and tin layer thickness were investigated on whisker development in the case of Sn thin-films. Sn was vacuum-evaporated onto both unpolished and mechanically polished Cu substrates with 1 mu m and 2 mu m average layer thicknesses. The samples were stored in room conditions for 60 days. The considerable stress-developed by the rapid intermetallic layer formation-resulted in intensive whisker formation, even in some days after the layer deposition. The developed whiskers and the layer structure underneath them were investigated with both scanning electron microscopy and ion microscopy. The Sn thin-film deposited onto unpolished Cu substrate produced less but longer whiskers than that deposited onto polished Cu substrate. This phenomenon might be explained by the dependence of IML formation on the surface roughness of substrates. The formation of IML wedges is more likely on rougher Cu substrates than on polished ones. Furthermore, it was found that with the decrease of layer thickness, the development of nodule type whiskers increases due to the easier diffusion of other atoms into the whisker bodies.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials

ISSN

1996-1944

e-ISSN

1996-1944

Svazek periodika

12

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

11

Strana od-do

—

Kód UT WoS článku

000502798800150

EID výsledku v databázi Scopus

2-s2.0-85074634954