Kinetics of Sn whisker growth from Sn thin-films on Cu substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00344952" target="_blank" >RIV/68407700:21230/20:00344952 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1007/s10854-020-04180-2" target="_blank" >https://doi.org/10.1007/s10854-020-04180-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-020-04180-2" target="_blank" >10.1007/s10854-020-04180-2</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Kinetics of Sn whisker growth from Sn thin-films on Cu substrate

Popis výsledku v původním jazyce

The kinetics of Sn whisker growth was investigated on vacuum-evaporated Sn thin-films. Sn film layers were deposited on a Cu substrate with 0.5 and 1 mu m thicknesses. The samples were stored in room conditions (22 +/- 1 degrees C/50 +/- 5RH%) for 60 days. The Sn whiskers and the Cu-Sn layer structure underneath them were investigated with both scanning electron and ion microscopy. Fast Cu-Sn intermetallic formation resulted in considerable mechanical stress in the Sn layer, which initiated intensive whisker growth right after the layer deposition. The thinner Sn layer produced twice many whiskers compared to the thicker one. The lengths of the filament-type whiskers were similar, but the growth characteristics differed. The thinner Sn layer performed the highest whisker growth rates during the first 7 days, while the thicker Sn layer increased the growth rate only after 7 days. This phenomenon was explained by the cross-correlation of the stress relaxation ability of Sn layers and the amount of Sn atoms for whisker growth. The very high filament whisker growth rates might be caused by the interface flow mechanism, which could be initiated by the intermetallic layer growth itself. Furthermore, a correlation was found between the type of the whiskers and the morphology of the intermetallic layer underneath.

Název v anglickém jazyce

Kinetics of Sn whisker growth from Sn thin-films on Cu substrate

Popis výsledku anglicky

The kinetics of Sn whisker growth was investigated on vacuum-evaporated Sn thin-films. Sn film layers were deposited on a Cu substrate with 0.5 and 1 mu m thicknesses. The samples were stored in room conditions (22 +/- 1 degrees C/50 +/- 5RH%) for 60 days. The Sn whiskers and the Cu-Sn layer structure underneath them were investigated with both scanning electron and ion microscopy. Fast Cu-Sn intermetallic formation resulted in considerable mechanical stress in the Sn layer, which initiated intensive whisker growth right after the layer deposition. The thinner Sn layer produced twice many whiskers compared to the thicker one. The lengths of the filament-type whiskers were similar, but the growth characteristics differed. The thinner Sn layer performed the highest whisker growth rates during the first 7 days, while the thicker Sn layer increased the growth rate only after 7 days. This phenomenon was explained by the cross-correlation of the stress relaxation ability of Sn layers and the amount of Sn atoms for whisker growth. The very high filament whisker growth rates might be caused by the interface flow mechanism, which could be initiated by the intermetallic layer growth itself. Furthermore, a correlation was found between the type of the whiskers and the morphology of the intermetallic layer underneath.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Science: Materials in Electronics

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

31

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

16314-16323

Kód UT WoS článku

000560292100001

EID výsledku v databázi Scopus

2-s2.0-85089462631