AFM-IN-SEM ANALYSIS ON HETEROSTRUCTURE EDGES OF GRAPHENE AND HEXAGONAL BORON NITRIDE

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00375620" target="_blank" >RIV/68407700:21230/24:00375620 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.37904/nanocon.2023.4810" target="_blank" >https://doi.org/10.37904/nanocon.2023.4810</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.37904/nanocon.2023.4810" target="_blank" >10.37904/nanocon.2023.4810</a>

Jazyk výsledku

angličtina

Název v původním jazyce

AFM-IN-SEM ANALYSIS ON HETEROSTRUCTURE EDGES OF GRAPHENE AND HEXAGONAL BORON NITRIDE

Popis výsledku v původním jazyce

Correlative microscopy methods have become significant due to the possibility of examining several material properties during one measurement. Atomic Force Microscopy in Scanning Electron Microscopy (AFM-in-SEM) is a correlative method that allows the simultaneous detection and acquisition of signals from both methods. Heterostructures of Graphene and hexagonal Boron Nitride (G/hBN) are studied with view to many electronic applications due to the possibility of tuning their electronic properties. In this work, we study electronic properties at the edges of single layer G on hBN flakes of various thicknesses prepared on Si and SiO2 substrates. Electronic properties are studied by AFM-in-SEM correlative microscopy that provides simultaneous acquisition of signals from both methods. Images of G/hBN heterostructure flakes obtained in the secondary electron detector show an enhanced signal along the edges that is attributed to localized electrons. We discuss how it corroborates a model that enhanced Raman signal of 2D and Si peaks on the G/hBN edges is electronic (plasmonic) rather than an optical or structural effect.

Název v anglickém jazyce

AFM-IN-SEM ANALYSIS ON HETEROSTRUCTURE EDGES OF GRAPHENE AND HEXAGONAL BORON NITRIDE

Popis výsledku anglicky

Correlative microscopy methods have become significant due to the possibility of examining several material properties during one measurement. Atomic Force Microscopy in Scanning Electron Microscopy (AFM-in-SEM) is a correlative method that allows the simultaneous detection and acquisition of signals from both methods. Heterostructures of Graphene and hexagonal Boron Nitride (G/hBN) are studied with view to many electronic applications due to the possibility of tuning their electronic properties. In this work, we study electronic properties at the edges of single layer G on hBN flakes of various thicknesses prepared on Si and SiO2 substrates. Electronic properties are studied by AFM-in-SEM correlative microscopy that provides simultaneous acquisition of signals from both methods. Images of G/hBN heterostructure flakes obtained in the secondary electron detector show an enhanced signal along the edges that is attributed to localized electrons. We discuss how it corroborates a model that enhanced Raman signal of 2D and Si peaks on the G/hBN edges is electronic (plasmonic) rather than an optical or structural effect.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/TM03000033" target="_blank" >TM03000033: TACOM - Vývoj korelativního AFM a SEM/AirSEM mikroskopu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2023 Conference Proceedings

ISBN

978-80-88365-15-0

ISSN

2694-930X

e-ISSN

—

Počet stran výsledku

5

Strana od-do

405-409

Název nakladatele

TANGER

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

18. 10. 2023

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

001234125400064