Transistors Based on the Nitride Semiconductor Heterostructures

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Transistors Based on the Nitride Semiconductor Heterostructures

Popis výsledku v původním jazyce

GaN based depletion and enhancement mode high electron mobility transistors (HEMT) were prepared and studied with the AlGaN/GaN heterojunction as the main channel. The e-mode operation was achieved by the addition of the Mg doped p-GaN suppression layer above the AlGaN blocking layer. Prepared samples were characterised by the van der Pauw method, output and transfer, and CV measurements. Furthermore, the diffusion of Mg was studied using the SIMS method. Enhancement mode operation was successfully achieved for the p-GaN variant. Current collapse degradation was observed in positively biased samples. Mg diffusion was successfully stopped by the addition of the absorption layer of the undoped GaN under the p-GaN layer.

Název v anglickém jazyce

Transistors Based on the Nitride Semiconductor Heterostructures

Popis výsledku anglicky

GaN based depletion and enhancement mode high electron mobility transistors (HEMT) were prepared and studied with the AlGaN/GaN heterojunction as the main channel. The e-mode operation was achieved by the addition of the Mg doped p-GaN suppression layer above the AlGaN blocking layer. Prepared samples were characterised by the van der Pauw method, output and transfer, and CV measurements. Furthermore, the diffusion of Mg was studied using the SIMS method. Enhancement mode operation was successfully achieved for the p-GaN variant. Current collapse degradation was observed in positively biased samples. Mg diffusion was successfully stopped by the addition of the absorption layer of the undoped GaN under the p-GaN layer.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the International Student Scientific Conference POSTER – 29/2025

ISBN

978-80-01-07422-0

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Fakulta elektrotechnická

Místo vydání

Praha

Místo konání akce

Praha

Datum konání akce

22. 5. 2025

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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