MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 micrometers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F15%3A00224613" target="_blank" >RIV/68407700:21340/15:00224613 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.jcrysgro.2014.09.053" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2014.09.053</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.09.053" target="_blank" >10.1016/j.jcrysgro.2014.09.053</a>

Jazyk výsledku

angličtina

Název v původním jazyce

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 micrometers

Popis výsledku v původním jazyce

Preparation and properties of InAs/GaAs quantum dots (QDs) prepared by the MOVPE technology covered by GaAsSb strain reducing layer (SRL) with extremely long emission wavelength at 1.8 µm will be presented. Increase of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, which is about 15 nm wide at the base and 5 nm high. Increased QD size increases the photoluminescence (PL) wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a redshift of the PL wavelength and decrease of the PL intensity are typical. Low PL intensity may complicate light emitting applications; however fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent (PC) measurement was chosen as the complementary characterization method. A depression of PC for quantum well wavelength region (approximately 900–1200 nm) was observed for positive bias, while the PC from QDs (over 1200 nm) is not sensitive to the electric field orientation at all. An explanation of this unexpected phenomenon is suggested.

Název v anglickém jazyce

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 micrometers

Popis výsledku anglicky

Preparation and properties of InAs/GaAs quantum dots (QDs) prepared by the MOVPE technology covered by GaAsSb strain reducing layer (SRL) with extremely long emission wavelength at 1.8 µm will be presented. Increase of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, which is about 15 nm wide at the base and 5 nm high. Increased QD size increases the photoluminescence (PL) wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a redshift of the PL wavelength and decrease of the PL intensity are typical. Low PL intensity may complicate light emitting applications; however fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent (PC) measurement was chosen as the complementary characterization method. A depression of PC for quantum well wavelength region (approximately 900–1200 nm) was observed for positive bias, while the PC from QDs (over 1200 nm) is not sensitive to the electric field orientation at all. An explanation of this unexpected phenomenon is suggested.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

1873-5002

Svazek periodika

414

Číslo periodika v rámci svazku

Mar

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

167-171

Kód UT WoS článku

000349602900030

EID výsledku v databázi Scopus

2-s2.0-84922565864