Study of Thin Films of LiNbO3 Using FTIR and Raman Spektroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F11%3A00185456" target="_blank" >RIV/68407700:21460/11:00185456 - isvavai.cz</a>

Výsledek na webu

<a href="http://spiedigitallibrary.org/proceedings/resource/2/psisdg/8306/1/830611_1?isAuthorized=no" target="_blank" >http://spiedigitallibrary.org/proceedings/resource/2/psisdg/8306/1/830611_1?isAuthorized=no</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.910590" target="_blank" >10.1117/12.910590</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of Thin Films of LiNbO3 Using FTIR and Raman Spektroscopy

Popis výsledku v původním jazyce

Lithium niobate (LiNbO(3)) is a material which can be used in many applications. LiNbO3 thin films were studied for the development of doped planar waveguides using Pulsed Laser Deposition (PLD) method from two targets. The films were deposited by PLD onSiO(2)/Si and (0001) sapphire substrates at temperatures 650 degrees C, 700 degrees C, 750 degrees C, from one crystalline and two sintered LiNbO(3) targets using KrF excimer laser. The film thickness was similar to 680 nanometers. Two techniques Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy - are used to characterize the dependence of the deposited thin films on the deposition conditions. These methods characterize the materials by monitoring their phonons whose spectra are sensitive to film deposition parameters. Bulk LiNbO(3) has rhombohedral crystal structure with two chemical units per primitive cell, it means, that 30 degrees of freedom are distributed between A(1) and E irreducible representations. The pr

Název v anglickém jazyce

Study of Thin Films of LiNbO3 Using FTIR and Raman Spektroscopy

Popis výsledku anglicky

Lithium niobate (LiNbO(3)) is a material which can be used in many applications. LiNbO3 thin films were studied for the development of doped planar waveguides using Pulsed Laser Deposition (PLD) method from two targets. The films were deposited by PLD onSiO(2)/Si and (0001) sapphire substrates at temperatures 650 degrees C, 700 degrees C, 750 degrees C, from one crystalline and two sintered LiNbO(3) targets using KrF excimer laser. The film thickness was similar to 680 nanometers. Two techniques Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy - are used to characterize the dependence of the deposited thin films on the deposition conditions. These methods characterize the materials by monitoring their phonons whose spectra are sensitive to film deposition parameters. Bulk LiNbO(3) has rhombohedral crystal structure with two chemical units per primitive cell, it means, that 30 degrees of freedom are distributed between A(1) and E irreducible representations. The pr

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE Vol. 8306 - Photonics, Devices, and Systems V

ISBN

978-0-8194-8953-1

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

1

Strana od-do

91

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Praha

Datum konání akce

24. 8. 2011

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

000297582500037