Optimization of X-ray Imaging by Timepix Based Radiation Camera with SI GaAs Sensor

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A90077%2F18%3A00344460" target="_blank" >RIV/68407700:90077/18:00344460 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/1.5048891" target="_blank" >https://doi.org/10.1063/1.5048891</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5048891" target="_blank" >10.1063/1.5048891</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optimization of X-ray Imaging by Timepix Based Radiation Camera with SI GaAs Sensor

Popis výsledku v původním jazyce

Digital radiation imaging cameras consisting of a 2D pixelated semiconductor detector structure directly bump bonded to a readout chip and connected to a personal computer through an interface have found their way from particle physics to medical and industrial applications. The most frequently used camera sensor material, silicon, is being gradually substituted by other compound semiconductor materials with higher absorption of X-rays and gamma rays like CdTe or GaAs, for some applications. The detection performance of our fabricated SI (semi-insulating) GaAs pixelated sensor connected to Timepix readout chip of a radiation camera was investigated. We have optimized the irradiation geometry to improve the imaging performances of the camera. We have shown that irradiation from the back side of the camera with GaAs sensor which suffers from an incomplete depletion of the detection volume will bring better imaging performances than the conventional front side irradiation of the camera. The reason rests in higher penetrability of the silicon Timepix readout chip to X-rays placed at the back camera side in comparison with a passive GaAs sensor layer from the front side of the camera.

Název v anglickém jazyce

Optimization of X-ray Imaging by Timepix Based Radiation Camera with SI GaAs Sensor

Popis výsledku anglicky

Digital radiation imaging cameras consisting of a 2D pixelated semiconductor detector structure directly bump bonded to a readout chip and connected to a personal computer through an interface have found their way from particle physics to medical and industrial applications. The most frequently used camera sensor material, silicon, is being gradually substituted by other compound semiconductor materials with higher absorption of X-rays and gamma rays like CdTe or GaAs, for some applications. The detection performance of our fabricated SI (semi-insulating) GaAs pixelated sensor connected to Timepix readout chip of a radiation camera was investigated. We have optimized the irradiation geometry to improve the imaging performances of the camera. We have shown that irradiation from the back side of the camera with GaAs sensor which suffers from an incomplete depletion of the detection volume will bring better imaging performances than the conventional front side irradiation of the camera. The reason rests in higher penetrability of the silicon Timepix readout chip to X-rays placed at the back camera side in comparison with a passive GaAs sensor layer from the front side of the camera.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

21100 - Other engineering and technologies

Projekt

—

Návaznosti

—

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Applied Physics of Condensed Matter (APCOM 2018)

ISBN

978-0-7354-1712-0

ISSN

0094-243X

e-ISSN

—

Počet stran výsledku

8

Strana od-do

—

Název nakladatele

American Institute of Physics

Místo vydání

Melville, New York

Místo konání akce

Štrbské Pleso

Datum konání akce

20. 6. 2018

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000443464900039