Ultrafialové fotoindukované slabé vazby v aryl - substituovaných polysilanech

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F07%3A63505363" target="_blank" >RIV/70883521:28110/07:63505363 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389013:_____/07:00084092

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Ultraviolet photoinduced weak bonds in aryl-substituted polysilanes

Popis výsledku v původním jazyce

The susceptibility of aryl-substituted polysilylenes to photodegradation by ultraviolet ( UV) radiation is examined on the prototypical materials poly[ methyl( phenyl) silylene] ( PMPSi) and poly[( biphenyl-4-yl) methylsilylene] ( PBMSi). The main purpose of this paper is to study photoluminescence ( PL) after major degradation, predominantly in long- wavelength range 400 - 600 nm, studying the disorder, dangling bonds ( DBs) and weak bonds ( WBs) created by the degradation process. The efficiency of the WB creation in PMPSi is greater for 266 nm irradiation, supporting the notion of the suppressed exciton transport compared to the less energetical photon of 355 nm, where the WB creation is lowered due to the exciton migration to longer segments and/oralready existing defects. For PBMSi the WB creation kinetics for 355 nm degradation is similar to that of PMPSi. The 266 nm degradation results then support the model calculations of DB and WB reconstruction in the more rigid Si skeleton

Název v anglickém jazyce

Ultraviolet photoinduced weak bonds in aryl-substituted polysilanes

Popis výsledku anglicky

The susceptibility of aryl-substituted polysilylenes to photodegradation by ultraviolet ( UV) radiation is examined on the prototypical materials poly[ methyl( phenyl) silylene] ( PMPSi) and poly[( biphenyl-4-yl) methylsilylene] ( PBMSi). The main purpose of this paper is to study photoluminescence ( PL) after major degradation, predominantly in long- wavelength range 400 - 600 nm, studying the disorder, dangling bonds ( DBs) and weak bonds ( WBs) created by the degradation process. The efficiency of the WB creation in PMPSi is greater for 266 nm irradiation, supporting the notion of the suppressed exciton transport compared to the less energetical photon of 355 nm, where the WB creation is lowered due to the exciton migration to longer segments and/oralready existing defects. For PBMSi the WB creation kinetics for 355 nm degradation is similar to that of PMPSi. The 266 nm degradation results then support the model calculations of DB and WB reconstruction in the more rigid Si skeleton

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CD - Makromolekulární chemie

OECD FORD obor

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Projekt

<a href="/cs/project/IAA100100622" target="_blank" >IAA100100622: KONJUGOVANÉ KŘEMÍKOVÉ POLYMERY PRO REZISTY V NANOTECHNOLOGIÍCH</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics: Condensed Matter

ISSN

0953-8984

e-ISSN

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Svazek periodika

19

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

7076101-7076122

Kód UT WoS článku

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EID výsledku v databázi Scopus

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