Filtry
In-situ monitoring of parameters influenceing MOVPE growth of GaN
In-situ monitoring of parameters influenceing MOVPE growth of GaN...
CA - Anorganická chemie
- 2005 •
- O
Rok uplatnění
O - Ostatní výsledky
In-Situ Monitoring of Parameters Influencing Temperature in MOVPE Nitride Growth
III nitride MOVPE growth. In addition, real time in-situ measurement and controlIn-situ reflectometry is a well-established method to monitor not just the in-situ measured band-gap shift of SiC in combination with...
CA - Anorganická chemie
- 2005 •
- O
Rok uplatnění
O - Ostatní výsledky
Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods
Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods...
BM - Fyzika pevných látek a magnetismus
- 2004 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
In-situ Observations of Lead Sulfate Crystal Growth on the Surface of a Negative Electrode
Atomic force microscopy brought the first in-situ observation of the events occurring on the negative electrode of a lead acid battery. It has confirmed that the growth of the sulfate crystals does not proceed uniformly on the surfa...
Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)
- 2017 •
- D
Rok uplatnění
D - Stať ve sborníku
In situ Analysis of Ga-ultra Thin Films by ToF-LEIS
In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth
BM - Fyzika pevných látek a magnetismus
- 2006 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films
and designed in our group for in situ monitoring of surface homogeneity of optical parameters of weakly absorbing thin films was tested in a series of ex- and in situ experiments. The tests confirmed that it is a convenient tool fo...
BM - Fyzika pevných látek a magnetismus
- 2001 •
- D
Rok uplatnění
D - Stať ve sborníku
In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films
and designed in our group for in situ monitoring of surface homogeneity of optical parameters of weakly absorbing thin films was tested in a series of ex- and in situ experiments. The tests confirmed that it is a convenient tool fo...
BH - Optika, masery a lasery
- 2002 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Growth of semiconducting heterostructures by MOVPE
The lecture focuses on properties, preparation and in-situ characterization of semiconducting heterostructures prepared by MOVPE technology.
BM - Fyzika pevných látek a magnetismus
- 2008 •
- D
Rok uplatnění
D - Stať ve sborníku
Epidermal growth factor and transforming growth factor-.alfa. mRNa in rat small intestine: in situ hybridization study.
Annotation not available...
EE - Mikrobiologie, virologie
- 1994 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applications
-nickel (Fe-Ni) alloy substrates, in-situ ellipsometric data were taken during the thin film growth at regular time intervals. The analysis of the in-situ data taken-Si:H) films change during their growth, leading ...
BH - Optika, masery a lasery
- 2014 •
- Jx •
- Odkaz
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
- 1 - 10 z 45 794