Filtry
SiC wafer for MOSFET application (epitaxial)
SiC wafers for MOSFETs (epitaxial): Functional samples are directly related to the verification of the above technologies This is a wide group of samples in specifications for different voltages (from the perspective of the epitaxial
Electrical and electronic engineering
- 2023 •
- Gfunk •
- Odkaz
Rok uplatnění
Gfunk - Funkční vzorek
Výsledek na webu
Effect of rare earth addition on liguid phase epitaxial InP-based semiconductor layers.
Original scientific paper dealing with Effect of rare earth addition on liguid phase epitaxial InP-based semiconductor layers....
CA - Anorganická chemie
- 1999 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Plasmonic modification of epitaxial nanostructures for the development of a highly efficient SERS platform
Epitaxy is the process of crystallization of monocrystalline layers semiconductor layers on a finite quantity of semiconductor substrates, like GaAs, InP, GaP, InGaP, GaP, and many others. The growth of
Optics (including laser optics and quantum optics)
- 2023 •
- Jimp •
- Odkaz
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Epitaxial multilayer structure for GaN-based high electron mobility transistors and a transistor containing this structure
GaN layers can be doped with magnesium. The multilayered epitaxial semiconductorEpitaxial multilayer semiconductor structure suitable for applications in nitride e-HEMT, which has an electron channel ...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2019 •
- P •
- Odkaz
Rok uplatnění
P - Patent
Výsledek na webu
200 mm Silicon Carbide Wafer with Epitaxial Layer
Silicon carbide (SiC, crystal polytype 4H) wafer with a diameter of 200 mm with an epitaxial layer for MOSFET applications (thickness 6 - 20 µm). The basic assumption is a high predicted yield and in terms of "killer" defects = defe...
Materials engineering
- 2024 •
- Gfunk •
- Odkaz
Rok uplatnění
Gfunk - Funkční vzorek
Výsledek na webu
Micropore modification in InP
The structural features and optical properties of microporous InP substrates used for epitaxial overgrowth of thin films have been investigated. Heat treatment of the InP pores under different phosphorus vapor pressure converted them structu...
JA - Elektronika a optoelektronika, elektrotechnika
- 2008 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents
We report the first liquid epitaxial growth of InAs layers from 100%Bi solvent. XRD measurements reveal perfect lattice matching between layer and substrate and < 0.07 % substitutional Bi content in the layers. Ram...
JA - Elektronika a optoelektronika, elektrotechnika
- 2006 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Processes of self-organization during epitaxial growth of semiconductor superlattices - an x-ray scattering study
self-organization, epitaxial growth, semiconductors...
BM - Fyzika pevných látek a magnetismus
- 2002 •
- C
Rok uplatnění
C - Kapitola v odborné knize
Avalanche Photodiode Structure for Photon Counting on Si0.6Ge0.4 Epitaxial Layer
We are presenting the results of the research and development of an avalanche photodiode structure, on the basis of SiGe epitaxial layer on Si wafer. The ultimate goal is to develop a solid state photon counting detector with picose...
JB - Senzory, čidla, měření a regulace
- 2007 •
- D
Rok uplatnění
D - Stať ve sborníku
Growth kinetics of thick InP layers
Applicability of the Burton-Cabrera-Frank model of crystal growth is limited in the case of LPE preparation of thick semiconductor layers due to volume diffusion of constituent atoms. This phenomenon can be accounted for by introduc...
JA - Elektronika a optoelektronika, elektrotechnika
- 2004 •
- D
Rok uplatnění
D - Stať ve sborníku
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